? semiconductor components industries, llc, 2002 june, 2002 rev. 3 1 publication order number: mj15001/d mj15001 (npn), MJ15002 (pnp) complementary silicon power transistors the mj15001 and MJ15002 are epibase power transistors designed for high power audio, disk head positioners and other linear applications. ? high safe operating area (100% tested) 5.0 a @ 40 v 0.5 a @ 100 v ? for low distortion complementary designs ? high dc current gain h fe = 25 (min) @ i c = 4 adc ???????????????????? ???????????????????? maximum ratings ???????????? ???????????? rating ???? ???? symbol ???? ???? value ??? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 140 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cbo ???? ???? 140 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v ebo ???? ???? 5 ??? ??? vdc ???????????? ???????????? collector current continuous ???? ???? i c ???? ???? 15 ??? ??? adc ???????????? ???????????? base current continuous ???? ???? i b ???? ???? 5 ??? ??? adc ???????????? ???????????? emitter current continuous ???? ???? i e ???? ???? 20 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ? ?? ? ???? p d ???? ? ?? ? ???? 200 1.14 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ???? ? ?? ? ???? 65 to +200 ??? ? ? ? ??? c ???????????????????? ???????????????????? thermal characteristics ???????????? ???????????? characteristic ???? ???? symbol ???? ???? max ??? ??? unit ???????????? ???????????? thermal resistance, junctiontocase ???? ???? r jc ???? ???? 0.875 ??? ??? c/w ???????????? ? ?????????? ? ???????????? maximum lead temperature for soldering purposes: 1/16 from case for 10 seconds ???? ? ?? ? ???? t l ???? ? ?? ? ???? 265 ??? ? ? ? ??? c http://onsemi.com device package shipping ordering information mj15001 to204aa (to3) 100 foams MJ15002 to204aa (to3) to204 (to3) case 107 100 foams 20 ampere power transistors complementary silicon 140 v 250 w marking diagram xx = specific device code a = assembly location wl, l = wafer lot yy, y = year ww, w = work week xxxxx yyww
mj15001 (npn), MJ15002 (pnp) http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (note 1) (i c , = 200 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 140 ???? ? ?? ? ???? ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 140 vdc, v be(off) = 1.5 vdc) (v ce = 140 vdc, v be(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ????? i cex ??? ? ? ? ??? ???? ? ?? ? ???? 100 2.0 ??? ? ? ? ??? adc madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 140 vdc, i b = 0) ????? ? ??? ? ????? i ceo ??? ? ? ? ??? ???? ? ?? ? ???? 250 ??? ? ? ? ??? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v eb = 5 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ???? ? ?? ? ???? 100 ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? second breakdown ?????????????????????? ? ???????????????????? ? ?????????????????????? second breakdown collector current with base forward biased (v ce = 40 vdc, t = 1 s (nonrepetitive)) (v ce = 100 vdc, t = 1 s (nonrepetitive)) ????? ? ??? ? ????? i s/b ??? ? ? ? ??? 5.0 0.5 ???? ? ?? ? ???? ??? ? ? ? ??? adc ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 4 adc, v ce = 2 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 25 ???? ? ?? ? ???? 150 ??? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 4 adc, i b = 0.4 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 4 adc, v ce = 2 vdc) ????? ????? v be(on) ??? ??? ???? ???? 2.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? currentgain e bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f test = 0.5 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 2.0 ???? ? ?? ? ???? ??? ? ? ? ??? mhz ?????????????????????? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 1 mhz) ????? ????? c ob ??? ??? ???? ???? 1000 ??? ??? pf 1. pulse test: pulse width = 300 s, duty cycle 2%. i c , collector current (amp) 5 figure 1. activeregion safe operating area v ce , collector-emitter voltage (volts) 5 7 10 200 10 2 2 3 50 70 100 20 30 7 200 1 3 0.5 0.2 0.7 0.3 t c = 25 c t j = 200 c bonding wire limited thermal limitation (single pulse) second breakdown limited curves apply below rated v ceo there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 1 is based on t j (pk) = 200 c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mj15001 (npn), MJ15002 (pnp) http://onsemi.com 3 f t , current-gain bandwidth product (mhz) i c , collector current (amp) 0.7 1 2 3 5 10 720 0.2 0.3 0.5 2 0.7 1 2 3 5 10 720 0.2 0.3 0.5 figure 2. capacitances i c , collector current (amp) 2.0 1.6 1.2 0.4 0.8 0 0.7 1 2 3 5 10 720 i c , collector current (amp) v r , reverse voltage (volts) figure 3. currentgain e bandwidth product figure 4. dc current gain 700 500 1000 3 5 10 150 2 300 200 100 70 50 30 20 7 i c , collector current (amp) fi g ure 5. aono volta g es 10 20 30 70 50 100 1.5 9 8 10 0.3 0.5 1 0.2 4 3 2 1 0.7 MJ15002 (pnp) 0 35 10 7 0.1 2 7 6 5 i c , collector current (amp) 0.2 0.3 0.5 t j = 25 c v be @ v ce = 2 vdc v ce(sat) @ i c /i b = 10 v, voltage (volts) t j = 100 c 25 c 100 c 2.0 1.6 1.2 0.4 0.8 0 0.7 1 2 3 5 10 720 0.2 0.3 0.5 t j = 100 c 25 c h fe , dc current gain v ce = 2 vdc t j = 25 c v ce = 10 v f test = 0.5 mhz c ib mj15001 (npn) t j = 25 c mj15001 (npn) MJ15002 (pnp) h fe , dc current gain v, voltage (volts) 70 50 100 30 20 10 7 5 3 2 200 70 50 100 30 20 10 7 5 3 200 c, capacitance (pf) c ib c ob c ob mj15001 MJ15002 mj15001 MJ15002 v ce = 2 vdc t j = 100 c 25 c v be @ v ce = 2 vdc t j = 25 c 100 c v ce(sat) @ i c /i b = 10 t j = 100 c 25 c typical characteristics
mj15001 (npn), MJ15002 (pnp) http://onsemi.com 4 package dimensions case 107 to204aa (to3) issue z notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. all rules and notes associated with referenced to-204aa outline shall apply. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.550 ref 39.37 ref b --- 1.050 --- 26.67 c 0.250 0.335 6.35 8.51 d 0.038 0.043 0.97 1.09 e 0.055 0.070 1.40 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n --- 0.830 --- 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.13 (0.005) y m t m y m 0.13 (0.005) t q y 2 1 u l g b v h on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj15001/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
